Us 5,391,511 A Semiconductor Processing Methodology Of Manufacturing An Isolated Polysilicon Lined Cavity And A Technique Of Forming A Capacitor

Shown in accompanying drawing 24L, the floor of the polysilicon layer 278 that oxidation is uncovered in ditch segmentation 262 is to form oxide skin 268 in energetic array.The facet of the polysilicon layer 278 in grid bus district 270 and finish area 290 (i.e. the institute’s area exposed that’s not coated by nitride layer... Find more